| PART |
Description |
Maker |
| V436664S24V V436664S24VXTG-75PC V436664S24VXTG-10P |
3.3 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED SDRAM MODULE
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
Mosel Vitelic Corp
|
| V437464C24V |
3.3 VOLT 64M x 72 HIGH PERFORMANCE PC133 REGISTERED PLL ECC SDRAM MODULE
|
Mosel Vitelic, Corp
|
| AT45DB642D-CU AT45DB642D09 AT45DB642D-CNU-SL954 AT |
64M X 1 FLASH 2.7V PROM, DSO8 6 X 8 MM, 1 MM HEIGHT, 1.27 MM PITCH, GREEN, CASON-8
64-megabit 2.7-volt Dual-interface DataFlash
|
Atmel, Corp.
聚兴科技股份有限公司
ATMEL Corporation
|
| TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM)
|
TOSHIBA
|
| IBM13M64734CCA |
64M x 72 2-Bank Registered/Buffered SDRAM Module(64M x 72 2组寄缓冲同步动态RAM模块) 64米72 2，银行注缓冲内存模组4米72 2组寄缓冲同步动态内存模块）
|
International Business Machines, Corp.
|
| M390S6450BT1 |
64M x 72 SDRAM DIMM with PLL & Register based on 64M x 4, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| 1760 |
WOODHEAD? TESTERS PERFORM BASIC-VERIFICATION AND MULTIFUNCTION WIRE TESTING WITH COMPACT, SIMPLE-TO-USE DEVICES THAT
|
Molex Electronics Ltd.
|
| KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
| Q7010LH5 Q7010RH5 Q7012LH5 Q7012RH5 Q7015L6 Q7015R |
Alternistor triac, 25A, 800 Volt
Alternistor triac, 15A, 400 Volt
Alternistor triac, 25A, 500 Volt
Alternistor triac, 25A, 200 Volt
Alternistor triac, 8A, 500 Volt
Alternistor triac, 25A, 400 Volt
Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-35
Alternistor Triacs 交变双向
Alternistor triac, 6A, 500 Volt
Alternistor triac, 15A, 200 Volt
Alternistor triac, 15A, 500 Volt
Alternistor triac, 15A, 600 Volt
Alternistor Triacs
|
TECCOR[Teccor Electronics]
Littelfuse, Inc.
Motorola Mobility Holdings, Inc.
|
| IDT72V36100 IDT72V36100L10PF IDT72V36100L15PF IDT7 |
3.3 VOLT HIGH-DENSITY SUPERSYNC⑩ II 36-BIT FIFO
3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO
|
IDT[Integrated Device Technology]
|
| AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启
x8/x16 Flash EEPROM x8/x16闪存EEPROM
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company
Atmel, Corp.
AMIC Technology, Corp.
Advanced Micro Devices, Inc.
ATMEL[ATMEL Corporation]
|
